[9a-N201-1~10] 6.1 Ferroelectric thin films

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N201-8] Electrical properties of (Rb,K)NbO₃ solid-solution thin films

〇Ayumu Masuda^1,2, Yuya Taguchi¹, Tatsuya Masuda², Yosuke Hamasaki³, Yoshitaka Ehara³, Hiroki Moriwake^1,2, Yoshinao Kobayashi¹, Shintaro Yasui¹ (1.Science Tokyo, 2.JFCC, 3.NDA)

Keywords:

ferroelectric materials,epitaxial thin films

Since perovskite-type RbNbO₃ has a phonon band structure very similar to that of BaTiO₃, it is expected to have the ferroelectricity and giant permittivity like BaTiO₃. Additionally, the ferroelectric phase transition of RbNbO₃ was confirmed to exist around 680 K, it is also expected to be a second BaTiO₃ material. RbNbO₃ is a high-pressure phase material, we focused on epitaxial thin films to stabilize it at ambient pressure. In this study, we fabricated solid-solution thin films of (Rb,K)NbO₃ using KNbO₃ as the end member and investigated the effect of Rb solid-solution on the crystal structure and dielectric properties.