[9a-N206-1~11] 15.5 Group IV crystals and alloys

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N206-10] Characterization of lateral spin transport devices with strained Si_0.15Ge_0.85

〇Kohei Shikatake¹, Kenji Oki¹, Shumpei Fujii¹, Sora Obinata^1,2, Takamasa Usami^2,3, Shuya Kikuoka⁴, Kentarou Sawano⁴, Kohei Hamaya^1,2,3 (1.Grad. Sch. Eng. Sci., The Univ. of Osaka., 2.CSRN, The Univ. of Osaka., 3.OTRI, The Univ. of Osaka., 4.Tokyo City Univ.)

Keywords:

semiconductor,spintronics,SiGe