The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[9a-N206-1~11]15.5 Group IV crystals and alloys

Tue. Sep 9, 2025 9:30 AM - 12:15 PM JST
Tue. Sep 9, 2025 12:30 AM - 3:15 AM UTC
N206 (Lecture Hall North)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N206-1]Improved properties of Si thin film anode by voltage control

〇Yo Eto1, Koki Nozawa1, Takashi Suemasu1, Kaoru Toko1 (1.Tsukuba Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N206-2]Photoluminescence properties of methylated germanane films formed by topochemical reactions

〇Atsuki Nakayama1, Kaito Nakajima1, Masaaki Araidai1,2, Shigehisa Shibayama1, Mitsuo Sakashita1, Takuya Sasaki1, Ken Niwa1,3, Masashi Hasegawa1,3, Osamu Nakatsuka1,2, Masashi Kurosawa1 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.RCCME, Nagoya Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[9a-N206-3]Optical Resonant Modes in Tensile-Strained Ge Microdisks Fabricated via Laser-Induced Liquid-Phase Crystallization

〇(M1)Liji Zhan1, Tianping Li1, Yuta Hayakawa2, Takuma Kobayashi2, Heiji Watanabe2, Takayoshi Shimura1,2 (1.Waseda Univ., 2.UOsaka)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-N206-4]Fabrication and characterization of lateral LED based on Ge-on-SOI

〇Riku Ishikawa1, Takahiro Inoue1, Kentarou Sawano1 (1.Tokyo City Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[9a-N206-5]Observation of room temperature EL emission from strained SiGe/Ge quantum well LEDs on Ge-on-Insulator(111)

〇Shuya Kikuoka1, Mayu Aikawa1, Ryoga Yokoki1, Nonoka Nagashima1, Kenji Oki2, Kohei Hamaya2,3,4, Kentarou Sawano1 (1.Tokyo City Univ., 2.Grad. Sch. Eng. Sci., The Univ. of Osaka., 3.CSRN, The Univ. of Osaka., 4.OTRI, The Univ. of Osaka.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N206-6]Evaluation of Defects in Si-Nanosheets Formed by CF4/H2 Plasma Etching of Si0.7Ge0.3/Si/Si0.7Ge0.3 Stacked Structures

〇Kotaro Ozaki1, Yusuke Imai1, Yuki Imai1, Takayoshi Tsutsumi2, Kenij Ishikawa2, Yuji Yamamoto1,3, Wei-Chen Wen3, Katsunori Makihara1,3 (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS, 3.IHP)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)English Presentation

[9a-N206-7]Broadband and Highly Responsive n-Ge Schottky Photodetectors with Short-Wave Infrared Transparent Conductive Oxide Electrodes

〇Rahmat Hadi Saputro1, Tomo Tanaka2, Hiroyuki Ishii1, Tatsuro Maeda1 (1.AIST, 2.NEC Corp.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-N206-8]Demonstration of room temperature operation of a PN-junction GeSn infrared detector

〇Tomo Tanaka1, Hiroyuki Ishii2, Rahmat Hadi Saputro2, Shigehisa Shibayama3, Masashi Kurosawa3, Osamu Nakatsuka3, Tatsuro Maeda2 (1.NEC Corp., 2.AIST, 3.Nagoya Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N206-9]Synthesis of infrared absorbing Ge layers for flexible multi-junction solar cells

〇Shintaro Maeda1,2, Takamitsu Ishiyama1,2, Suemasu Takashi1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.JSPS Research Fellow)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N206-10]Characterization of lateral spin transport devices with strained Si0.15Ge0.85

〇Kohei Shikatake1, Kenji Oki1, Shumpei Fujii1, Sora Obinata1,2, Takamasa Usami2,3, Shuya Kikuoka4, Kentarou Sawano4, Kohei Hamaya1,2,3 (1.Grad. Sch. Eng. Sci., The Univ. of Osaka., 2.CSRN, The Univ. of Osaka., 3.OTRI, The Univ. of Osaka., 4.Tokyo City Univ.)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[9a-N206-11]Observation of Room-Temperature Spin Signals in a Vertical Co2MnSi/n-Ge/Co2MnSi

〇Shimon Watahiki1, Sora Obinata1,2, Shinya Yamada1,2,3, Shuya Kikuoka4, Michihiro Yamada4, Kentarou Sawano4, Kohei Hamaya1,2,3 (1.GSES, Osaka Univ., 2.CSRN, Osaka Univ., 3.OTRI-Spin, Osaka Univ., 4.Tokyo City Univ.)
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