[9a-N301-1~11] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N301-5] p-AlGaN EBL for Improved Current Injection Efficiency Higher Quality p-AlGaN EBL

〇Mahiro Oguchi¹, Rie Togashi^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

Keywords:

InGaN