[9a-N301-1~11] 15.4 III-V-group nitride crystals | The 86th JSAP Autumn Meeting 2025

Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[9a-N301-1~11]15.4 III-V-group nitride crystals

Tue. Sep 9, 2025 9:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 12:00 AM - 3:00 AM UTC

N301 (Lecture Hall North)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-N301-1]Study on exfoliation of epitaxial nitride thin films on graphene/SiC substrates

〇(M2)Mana Tomizawa¹, Minjae Jun¹, Kohei Ueno¹, Ting Pan², Hodaka Hamamoto², Keisuke Takemoto², Kenta Emori², Hiroshi Fujioka¹ (1.Univ. of Tokyo, 2.Nissan Motor Co., Ltd.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-N301-2]Fabrication of ternally alloy semiconductor template of AlGaN using nanochannel epitaxy

〇Shigeya Naritsuka¹, Takuya Takahashi¹, Ryuya Matsumoto¹, Kouki Nagase¹, Takahiro Maruyama¹ (1.Meijo Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N301-3]RF-MBE GaN Growth on Patterned SiC Substrate Fabricated by PEM Stamping

〇Yoshiki Okubo¹, Atsushi Ota¹, Trang Nakamoto², Takashi Fujii³, Junji Murata¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N301-4]Misfit accommodation in a single atomic InN layer at a highly mismatched InN/GaN

Tomiki Nagase¹, Kenta Chokawa¹, Emi Kano¹, Keisuke Fukuta¹, Kenji Shiraishi¹, Atsushi Oshiyama¹, Tsutomu Araki², 〇Nobuyuki Ikarashi¹ (1.Nagoya Univ., 2.Ritsumeikan Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N301-5]p-AlGaN EBL for Improved Current Injection Efficiency Higher Quality p-AlGaN EBL

〇Mahiro Oguchi¹, Rie Togashi^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[9a-N301-6]Development of Uni-Traveling-Carrier Photodiode Based on MoS₂/GaN Heterojunction for Visible-Light Detection

〇Takuya Kadowaki¹, Takahiro Serikawa¹, Akihide Ichikawa¹, Yuji Ohmaki¹, Koji Usami¹, Yoichi Kawakami¹, Yoshihiro Iwasa², Hisashi Ogawa¹ (1.NICHIA Corp., 2.RIKEN CEMS)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N301-7]Second Harmonic Generation in Horizontally Stacked AlN/SiN_x Waveguide

〇Hiroto Honda¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.The Univ. Osaka)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N301-8]Substrate exfoliation by Laser Lift-Off and surface roughening for high LEE UV-C LEDs

〇(M2)Sena Miura¹, Maho Fujita¹, Teppei Takehisa¹, Hibiki Muto¹, Kenta Takase¹, Marina Fujita¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Hisanori Ishiguro¹, Koji Okuno^1,2, Yoshiki Saito^1,2 (1.Meijo Univ., 2.Toyoda Gosei)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N301-9]Increase in External Quantum Efficiency of Deep Ultraviolet Micro LED Arrays with Mesa Size Miniaturing

〇Yuma Yamaguchi¹, Shigeya Kimura¹, Tetsuya miyagawa¹, Rei Hashimoto¹, Shinji Saito¹, Shinya Nunoue¹ (1.Toshiba Corporation)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N301-10]Analysis of alteration layer formed by treating AlGaN with saturated vapor pressure water

〇(DC)Eri Matsubara¹, Sho Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Takahiro Maruyama¹, Hideto Miyake² (1.Meijo Univ, 2.Mie Univ)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N301-11]Low-Temperature Water Lift-Off for Sapphire Removal in Vertical UV-B LDs

〇Yuma Miyamoto¹, Takumu Saito¹, Yusuke Sasaki¹, Seiya Kato¹, Naoki Kitta¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Back to Category List