[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N302-8] Resistivity Control via Sb Evaporation During Growth of CZ-Si Crystals for Power Devices

〇Masataka Hourai^2,3, Yasuhito Narushima¹, Toshiyuki Fujiwara², Wataru Sugimura², Manabu Shimoyama², Toshiaki Ono², Kouichi Kakimoto³, Shinichi Nishizawa³ (1.SUMCO TECHXIV, 2.SUMCO, 3.Kyushu Univ.RIAM)

Keywords:

Sb doped CZ-Si Crystal,Sb evaporation,Power device

Pulling experiments of Sb-doped CZ-Si crystals were conducted based on a design of experiments approach, using the furnace pressure, Ar gas flow rate, and the gap between the bottom of the radiation shield and the melt surface as operational parameters. Since the evaporation coefficient of Sb is linearly proportional to the Ar flow velocity at the melt surface, the Sb evaporation rate can be manipulated by adjusting the Sb concentration in the melt and the Ar flow velocity. Consequently, it was found that the resistivity along the growth direction of Sb-doped CZ-Si crystals can be uniformly controlled by the initial Sb concentration in the melt and the Ar gas flow velocity.