[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects | The 86th JSAP Autumn Meeting 2025

Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[9a-N302-1~11]15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 9, 2025 9:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 12:00 AM - 3:00 AM UTC

N302 (Lecture Hall North)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-N302-1]Effect of crystal diameter fluctuation on dislocation behavior in <110>-oriented CZ-Si crystals

〇Hisashi Matsumura^1,2, Hiroyuki Saito¹, Toshinori Taishi² (1.GlobalWafers Japan Co., Ltd., 2.Shinshu Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-N302-2]Misorientation angle dependence on Silicon (110) surface morphology during high-temperature annealing

〇Takeshi Senda¹, Ken Hayakawa¹, Haruo Sudo¹, Hisashi Matsumura¹ (1.GlobalWafers Japan Co., Ltd.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N302-3]Oxide Film Density on Si (100) and (110) Wafers during Oxidation by RTP

〇KEN HAYAKAWA¹, Haruo Sudo¹, Takeshi Senda¹, Hisashi Matsumura¹ (1.GlobalWafers Japan Co., Ltd.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N302-4]Annihilation Behavior of Void Defects in Si (100) and (110) Wafers during Oxidation by RTP

〇Haruo Sudo¹, Ken Hayakawa¹, Takeshi Senda¹, Hisashi Matsumura¹ (1.GWJ)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N302-5]Genetic Algorithm Assited Searching for Stable Atomic Stuructures of Vacancy - Oxygen Complexes in RTP Wafers

〇Hiroya Iwashiro^1,2, Hibiki Bekku¹, Haruo Sudo², Ken Hayakawa², Eiji Kamiyama², Koji Sueoka³ (1.Graduate School of Computer Science and Systems Engineering, Okayama Prefectural Univ., 2.Global Wafers Japan Co., Ltd., 3.Okayama Prefectural Univ.)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-N302-6]First-principles analysis of stability of dopant atoms inside Si {311} defect

〇Eiji Kamiyama^1,2, Yuta Nagai¹, Koji Izunome^1,2, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N302-7]Diffusion behavior of fluorine on the CH₂F⁺ implanted Si epitaxial wafer

〇Ryo Hirose¹, Takeshi Kadono¹, Koji Kobayashi¹, Sho Nagatomo¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N302-8]Resistivity Control via Sb Evaporation During Growth of CZ-Si Crystals for Power Devices

〇Masataka Hourai^2,3, Yasuhito Narushima¹, Toshiyuki Fujiwara², Wataru Sugimura², Manabu Shimoyama², Toshiaki Ono², Kouichi Kakimoto³, Shinichi Nishizawa³ (1.SUMCO TECHXIV, 2.SUMCO, 3.Kyushu Univ.RIAM)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N302-9]Resistivity control using evaporation effect of dopant in CZ-Si crystal growth

〇Takumi Yatai¹, Saito Wataru², Nishizawa Shin-ichi² (1.Kyushu Univ, 2.Kyushu Univ RIAM)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N302-10]Analysis of thermal conductivity of Si_xGe_1-x by molecular dynamics calculation

〇Koichi Kakimoto¹ (1.IMR, Tohoku Univ.)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N302-11]Effect of transparency of a crystal and a melt of Ga₂O₃ on temperature distribution during OCCC growth

〇Koichi Kakimoto¹, Taketoshi Tomida², Vladimir Kochurikhin², Masanori Kitahara², Kei Kamada^1,2, Satoshi Nakano³, Yao Yongzhao⁴, Kazuaki Akaiwa⁵, Akira Yoshikawa^1,2 (1.IMR, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.Mie Univ., 5.Tottori Univ.)

Back to Category List