[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N302-9] Resistivity control using evaporation effect of dopant in CZ-Si crystal growth

〇Takumi Yatai¹, Saito Wataru², Nishizawa Shin-ichi² (1.Kyushu Univ, 2.Kyushu Univ RIAM)

Keywords:

crystal growth,Czochralski method,segregation

In the Czochralski (CZ) method of silicon single crystal growth, phosphorus (P) and antimony (Sb) increase the impurity concentration along the crystal growth axis due to segregation, which significantly affects the crystal resistivity. In this study, we investigated a method to promote evaporation of dopants and suppress segregation by controlling the flow rate and pressure of argon (Ar) gas. The evaporation behavior of P and Sb was different, and it was found that Sb was particularly sensitive to flow rate and pressure changes. These results suggest that it is possible to grow crystals with constant resistivity under low concentration doping conditions.