[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-N322-6] One-dimensional unsteady thermal conduction simulation of pulsed-laser annealing for ion-implanted GaN using a diamond-like carbon film

〇Shuntaro Ono¹, Asami Sugimoto¹, Arihiro Nishigaki¹, Yuzuka Minami², Yosihiro Shimazaki², Yuko Arai², Masamitu Toramaru², Yosito Jin², Kazuyosi Tomita³, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ.)

Keywords:

pulsed-laser annealing,diamond-like carbon,ion implantion