[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization | The 86th JSAP Autumn Meeting 2025

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[9a-N322-1~8]13.7 Compound and power devices, process technology and characterization

Tue. Sep 9, 2025 10:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 1:00 AM - 3:00 AM UTC

N322 (Lecture Hall North)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N322-1]Investigation of InP-HEMT degradation mechanism during the back-end process

〇Taro Sasaki¹, Hiroki Sugiyama¹, Yuki Yoshiya¹, Takuya Hoshi¹, Yasuyuki Miyamoto², Fumito Nakajima¹ (1.NTT Device Technology Labs., 2.Inst. of Science Tokyo)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-N322-2]Fabrication of AlGaN/GaN HBT with thinner Base layer

〇Shota Kokubo¹, Tanaka Atushi², Honda Yoshio^2,3,4, Amano Hiroshi^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.IAR Nagoya Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N322-3]Demonstration of GaN Photoconductive Semiconductor Switch (PCSS) Utilizing a Semi-insulating GaN Substrate and Si-ion Implantation

〇Chinwei Li¹, Kenji Iso², Ryosho Nakane¹, Takuya Maeda¹ (1.UTokyo, 2.Mitsubishi Chemical Co.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N322-4]Luminescence study of GaN implanted with low-dose Si, Al, and N ions

〇Kohei Shima¹, Masahiro Horita^2,3, Jun Suda^2,3, Shoji Ishibashi⁴, Akira Uedono⁵, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Nagoya Univ., 3.IMaSS-Nagoya Univ., 4.CCS-Univ. of Tsukuba, 5.Univ. of Tsukuba)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N322-5]Effect of inserting an AlN intermediate layer on atmospheric pressure activation of Mg ion-implanted GaN using OVPE

〇Shigeyoshi Usami¹, Yuta Ito², Sogo Yokoi¹, Atsushi Tanaka³, Junichi Takino⁴, Tomoaki Sumi⁴, Masayuki Imanishi¹, Masashi Yokoyama⁵, Masahiko Hata⁶, Yoshio Okayama⁴, Yoshio Honda³, Hiroshi Amano³, Yusuke Mori¹ (1.UOsaka, 2.Nagoya Univ., 3.IMaSS Nagoya Univ., 4.Panasonic Holdings Corp., 5.Sumitomo Chemical Co., Ltd., 6.Itochu Plastics Inc.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-N322-6]One-dimensional unsteady thermal conduction simulation of pulsed-laser annealing for ion-implanted GaN using a diamond-like carbon film

〇Shuntaro Ono¹, Asami Sugimoto¹, Arihiro Nishigaki¹, Yuzuka Minami², Yosihiro Shimazaki², Yuko Arai², Masamitu Toramaru², Yosito Jin², Kazuyosi Tomita³, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N322-7]Low-temperature PL characterization of pulsed-laser-annealed Mg-ion-implanted GaN

〇Asami Sugimoto¹, Shuntaro Ono¹, Arihiro Nishigaki¹, Yuzuka Minami², Masamitsu Toramaru², Yuko Arai², Yoshihiro Shimazaki², Yoshito Jin², Kazuyoshi Tomita³, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ.)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N322-8]Electrical characterization of pulsed-laser annealed Si-ion implanted GaN

〇(M2)Arihiro Nishigaki¹, Haruto Hirota¹, Shuntaro Ono¹, Asami Sugimoto¹, Yuko Arai², Yuzuka Minami², Yoshihiro Shimazaki², Masamitu Toramaru², Yoshihito Jin², Kazuyoshi Tomita³, Akira Uedono⁴, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ., 4.Tsukuba Univ.)

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