Presentation Information
[9a-N401-11]Nitridation and Oxynitridation Mechanisms at Interface and Surface of Hf-Deposited Si(111) Induced by Supersonic Molecular Beams of N2 and NO
〇Takuhiro Kakiuchi1, Yoshino Oura1, Hina Takashiro1, Yasutaka Tsuda2, Akitaka Yoshigoe2 (1.Ehime Univ., 2.JAEA)
Keywords:
Hafnium oxynitride,X-ray photoelectron spectroscopy,Supersonic molecular beam
Supersonic nitrogen molecular beams (SN2B) and supersonic nitric oxide molecular beams (SNOB) were irradiated onto Hf-deposited Si(111) surfaces to investigate the mechanisms of nitridation and oxynitridation, as well as the resulting surface and interfacial products, using synchrotron radiation X-ray photoelectron spectroscopy. Under SN2B irradiation, the dissociated nitrogen atoms selectively reacted with the Si substrate at the Hf-Si(111) interface. No charge transfer from the Hf-Si(111) surface to N2 molecules was observed. Meanwhile, under SNOB irradiation, the nitrogen content at the oxynitrided interface varied depending on the number of the impinging NO molecules.