[9a-N401-1~11] CS.9 Code-sharing session of 6.5&7.5

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N401-11] Nitridation and Oxynitridation Mechanisms at Interface and Surface of Hf-Deposited Si(111) Induced by Supersonic Molecular Beams of N₂ and NO

〇Takuhiro Kakiuchi¹, Yoshino Oura¹, Hina Takashiro¹, Yasutaka Tsuda², Akitaka Yoshigoe² (1.Ehime Univ., 2.JAEA)

Keywords:

Hafnium oxynitride,X-ray photoelectron spectroscopy,Supersonic molecular beam

Supersonic nitrogen molecular beams (SN₂B) and supersonic nitric oxide molecular beams (SNOB) were irradiated onto Hf-deposited Si(111) surfaces to investigate the mechanisms of nitridation and oxynitridation, as well as the resulting surface and interfacial products, using synchrotron radiation X-ray photoelectron spectroscopy. Under SN₂B irradiation, the dissociated nitrogen atoms selectively reacted with the Si substrate at the Hf-Si(111) interface. No charge transfer from the Hf-Si(111) surface to N₂ molecules was observed. Meanwhile, under SNOB irradiation, the nitrogen content at the oxynitrided interface varied depending on the number of the impinging NO molecules.