Session Details

[9a-N401-1~11]CS.9 Code-sharing session of 6.5&7.5

Tue. Sep 9, 2025 9:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 12:00 AM - 3:00 AM UTC
N401 (Lecture Hall North)
Kei Mitsuhara(KOBELCO RESEARCH INSTITUTE, INC.), Masaru Takizawa(立命館大)

[9a-N401-1]Analysis of Subpercentage Oxygen Vacancies in Oxides by Valence Band HAXPES

Masaki Nakamura1, Hirosuke Sumida2, 〇Satoru Suzuki1 (1.Univ. of Hyogo, 2.Mazda Motor Corp.)
Comment()

[9a-N401-2]Fabrication of Silicon Nanostructures Using AFM Lithography and 2-Dimensional Carbon Materials Assisted Etching

〇(M2)Yuki Miura1, Toru Utsunomiya1, Takashi Ichii1 (1.Kyoto Univ.)
Comment()

[9a-N401-3]Reactivity of monolayer h-BN on Ni(111) with CO and H2O

〇Masaaki Ando1, Giovanni Carraro2, Letizia Savio2, Gianangelo Bracco2,3,5, Mario Rocca2,3, Michio Okada1,4, Luca Vattuone2,3,5 (1.U. Osaka, 2.IMEM-CNR Genoa Unit, 3.DIFI University of Genoa, 4.U. Osaka IRS, 5.INAF Genoa Unit)
Comment()

[9a-N401-4]Epitaxial crystalline SiN layer on SiC(0001)

〇Jo Onoda1, Hiroshi Ando2, Robert Wolkow3, Jason Pitters4, Takeshi Nakagawa5, Anton Viscovskiy6, Satoru Tanaka6 (1.UTEF, 2.PhoSIC, 3.Univ. Alberta, 4.NRC, 5.Kyushu Univ. IGSES, 6.Kyushu Univ.)
Comment()

[9a-N401-5]Cooperative Oxidation Reaction Mechanism on Si surfaces: Comparison of Minority Carrier Trapping Processes between p-Si(001) and n-Si(001) Surfaces

〇(M1)Yuki Okabe1, Yasutaka Tsuda2, Hengyu Wen1, Akitaka Yoshigoe2, Yuji Takakuwa3, Shuichi Ogawa1 (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)
Comment()

[9a-N401-6]Defect Formation in Ultraviolet-Irradiated Multi-walled Carbon Nanotubes

〇(M2)Ikkei Araki1, Naoyuki Maejima1, Masaru Takizawa1 (1.Ritsumeikan Univ.)
Comment()

[9a-N401-7]Effects of Atomic Hydrogen on Pentacene Polymerization

〇Misaki Nakayama1, Koji Sumitomo1, Akira Heya1 (1.Univ. of Hyogo)
Comment()

[9a-N401-8]Synthesis of N-doped DLC using Photo-emission Assisted Plasma CVD

〇(M1C)Yulin Yan1, Satoshi Seki1, Shuichi Ogawa1 (1.Nihon Univ.)
Comment()

[9a-N401-9]Charge Transport Properties Through Multiple-Stacked Si Nano Dots

〇(M1)Haruto Kubota1, Baek Jongeun1, Yuki Imai1, Noriyuki Taoka2, Katsunori Makihara1 (1.Grad. Nagoya Univ., 2.Aichi Inst. Tech)
Comment()

[9a-N401-10]Growth Mode and Mechanism of Interface Trap Suppression in PECVD-SiO2/Si
Deduced from Correlation between XPS Si 2p Spectra and Interface Trap Density

〇Sakura-Nishino Takeda1, Emilia Hashamova2, Sai Hasegawa1, Mutsunori Uenuma3, Tomoyuki Miyao1, Naoaki Ono1, Yukiharu Uraoka1, Kimito Funatsu1 (1.NAIST, 2.KIT, 3.AIST)
Comment()

[9a-N401-11]Nitridation and Oxynitridation Mechanisms at Interface and Surface of Hf-Deposited Si(111) Induced by Supersonic Molecular Beams of N2 and NO

〇Takuhiro Kakiuchi1, Yoshino Oura1, Hina Takashiro1, Yasutaka Tsuda2, Akitaka Yoshigoe2 (1.Ehime Univ., 2.JAEA)
Comment()