Session Details

[9a-N401-1~11]CS.9 Code-sharing session of 6.5&7.5

Tue. Sep 9, 2025 9:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 12:00 AM - 3:00 AM UTC
N401 (Lecture Hall North)

[9a-N401-1]Analysis of Subpercentage Oxygen Vacancies in Oxides by Valence Band HAXPES

Masaki Nakamura1, Hirosuke Sumida2, 〇Satoru Suzuki1 (1.Univ. of Hyogo, 2.Mazda Motor Corp.)

[9a-N401-2]Fabrication of Silicon Nanostructures Using AFM Lithography and 2-Dimensional Carbon Materials Assisted Etching

〇(M2)Yuki Miura1, Toru Utsunomiya1, Takashi Ichii1 (1.Kyoto Univ.)

[9a-N401-3]Reactivity of monolayer h-BN on Ni(111) with CO and H2O

〇Masaaki Ando1, Giovanni Carraro2, Letizia Savio2, Gianangelo Bracco2,3,5, Mario Rocca2,3, Michio Okada1,4, Luca Vattuone2,3,5 (1.U. Osaka, 2.IMEM-CNR Genoa Unit, 3.DIFI University of Genoa, 4.U. Osaka IRS, 5.INAF Genoa Unit)

[9a-N401-4]Epitaxial crystalline SiN layer on SiC(0001)

〇Jo Onoda1, Hiroshi Ando2, Robert Wolkow3, Jason Pitters4, Takeshi Nakagawa5, Anton Viscovskiy6, Satoru Tanaka6 (1.UTEF, 2.PhoSIC, 3.Univ. Alberta, 4.NRC, 5.Kyushu Univ. IGSES, 6.Kyushu Univ.)

[9a-N401-5]Cooperative Oxidation Reaction Mechanism on Si surfaces: Comparison of Minority Carrier Trapping Processes between p-Si(001) and n-Si(001) Surfaces

〇(M1)Yuki Okabe1, Yasutaka Tsuda2, Hengyu Wen1, Akitaka Yoshigoe2, Yuji Takakuwa3, Shuichi Ogawa1 (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)

[9a-N401-6]Defect Formation in Ultraviolet-Irradiated Multi-walled Carbon Nanotubes

〇(M2)Ikkei Araki1, Naoyuki Maejima1, Masaru Takizawa1 (1.Ritsumeikan Univ.)

[9a-N401-7]Effects of Atomic Hydrogen on Pentacene Polymerization

〇Misaki Nakayama1, Koji Sumitomo1, Akira Heya1 (1.Univ. of Hyogo)

[9a-N401-8]Synthesis of N-doped DLC using Photo-emission Assisted Plasma CVD

〇(M1C)Yulin Yan1, Satoshi Seki1, Shuichi Ogawa1 (1.Nihon Univ.)

[9a-N401-9]Charge Transport Properties Through Multiple-Stacked Si Nano Dots

〇(M1)Haruto Kubota1, Baek Jongeun1, Yuki Imai1, Noriyuki Taoka2, Katsunori Makihara1 (1.Grad. Nagoya Univ., 2.Aichi Inst. Tech)

[9a-N401-10]Growth Mode and Mechanism of Interface Trap Suppression in PECVD-SiO2/Si
Deduced from Correlation between XPS Si 2p Spectra and Interface Trap Density

〇Sakura-Nishino Takeda1, Emilia Hashamova2, Sai Hasegawa1, Mutsunori Uenuma3, Tomoyuki Miyao1, Naoaki Ono1, Yukiharu Uraoka1, Kimito Funatsu1 (1.NAIST, 2.KIT, 3.AIST)

[9a-N401-11]Nitridation and Oxynitridation Mechanisms at Interface and Surface of Hf-Deposited Si(111) Induced by Supersonic Molecular Beams of N2 and NO

〇Takuhiro Kakiuchi1, Yoshino Oura1, Hina Takashiro1, Yasutaka Tsuda2, Akitaka Yoshigoe2 (1.Ehime Univ., 2.JAEA)