Presentation Information

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N401-5]Cooperative Oxidation Reaction Mechanism on Si surfaces: Comparison of Minority Carrier Trapping Processes between p-Si(001) and n-Si(001) Surfaces

〇(M1)Yuki Okabe¹, Yasutaka Tsuda², Hengyu Wen¹, Akitaka Yoshigoe², Yuji Takakuwa³, Shuichi Ogawa¹ (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)

Keywords:

Si thermal oxidation,real time XPS,surface reaction

Our real-time XPS analysis revealed that interfacial oxidation is rate-limited by minority carrier trapping to maintain electrical neutrality. Furthermore, the minority carrier trapping coefficients for the reaction between ionized vacancies (V^±) and molecular chemisorbed oxygen (O₂^2-(chem)) after majority carrier trapping were determined as 0.54 for p-Si and 0.59 for n-Si, demonstrating an advantage for n-type silicon. These findings support the validity of the concerted oxidation reaction model.

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