[9a-N406-1~7] 1.3 Novel technologies and interdisciplinary engineering

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N406-5] Development of a CORE Silicon Etching Technique Using General-Purpose RIE Equipment: Influence of Mask Material

〇Kanna Aoki¹, Kouichi Akahane¹ (1.NICT)

Keywords:

silicon,dry etching,BOSCH

The silicon deep-etching technique is essential for microelectromechanical systems (MEMS) devices, such as accelerometers and actuators. In a previous report, we discussed the silicon processing geometry that can be achieved using the CORE method, developed by the Technical University of Denmark (DTU), with a general-purpose RIE system. In that study, photoresist was the only etching mask used, limiting the maximum etching depth to 1.9 microns. This time, we present the results of a comparative study of using SiO₂, Cr, and SiO₂/Cr as etching masks to obtain a structure with a higher aspect ratio.