Presentation Information
[9a-P01-16]Fabrication and Characterization of H-terminated Diamond MOSFETs with Buried Electrodes Formed by Ion Implantation
〇Sakura Uehara1, Yuhei Seki2, Yasushi Hoshino2, Hitoshi Umezawa3, Junich H Kaneko1 (1.Hokkaido Univ., 2.Kanagawa Univ., 3.AIST.)
Keywords:
Diamond,Field effect transistor,Ion implantation
Toward the high integration of diamond digital circuits, we attempted to fabricate diamond field effect transistors (FETs) using ion implantation technology. We used ion implantation and CVD methods to form the p+ region, and compared the transistor characteristics of both samples fabricated with the same process and dimensions. As a result, the maximum drain current density of the FET formed using the ion implantation method was about 6.6 times that of the FET formed using the CVD method.