[9a-P01-1~17] 6.2 Carbon-based thin films

[9a-P01-17] Trench-type contact structure for vertical-type diamond MOSFET

〇Shunsuke Shoji^1,2, Kosuke Ota^1,2, Nobutaka Oi¹, Akihiko Watanabe³, Ichiro Omura³, Kenji Ueda², Hiroshi Kawarada¹, Tatsuya Fujishima¹ (1.Power Diamond Systems, 2.Waseda Univ., 3.Kyushu Institute of Technology)

Keywords:

semiconductor,Diamond

Diamond has outstanding physical properties that make it highly attractive for next generation power devices.In this study, we propose a trench-shape ohmic contact structure on diamond and the contact resistance was subsequently evaluated.In this work, the contact structure is formed exclusively along the vertical sidewalls of the etched region, the fabricated structures exhibited clear ohmic behavior. These results indicate that the proposed trench-shape ohmic contact structure is a promising approach for future diamond-based devices.