Presentation Information
[9a-P01-3]Surface reaction of Si-containing DLC films due to monochromatized soft X-ray
〇Kazuhiro Kanda1, Tomohiro Mishima1, Koji Nakanishi1, Hiroki Akasaka2 (1.Lasti, Univ. Hyogo, 2.Sch. Eng., Inst. Sci. Tokyo)
Keywords:
diamond-like carbon film,selective excitation,X-ray Absorption Spectrometry
Monochromatized soft X-rays with different energies were irradiated onto highly hydrogenated DLC films containing Si (Si-H-DLC films), and the soft X-ray irradiation reactions occurring on the film surface were discussed by measuring the near-edge fine structure (NEXAFS) of the C K-edge and Si K-edge absorption fine structures of the irradiated samples. It was found that C-H bonds are decoupled by selective excitation of C K-edge and Si L-edge electrons, and that the oxidation of Si is a very fast reaction.