Presentation Information
[9a-P02-11]Valence state and electronic structure for metal-insulator transition of b-axis oriented VO2 thin film
〇Naohiro Egawa1, Taisei Yamada1, Naoya Arihara1, Daisuke Shiga2, Hiroshi Kumigashira2, Tohru Higuchi1 (1.Tokyo Univ. Sci., 2.Tohoku Univ.)
Keywords:
VO2 thin film,Electronic structure,metal-insulator transition
We have prepared the a-axis orineted VO2 thin film on Al2O3 substrate bby RF magnetron sputtering and characterized its structural and electrical properties. The prepared VO2 thin film exhibited large resistivity change and unique electronic strcuture by the metal-insulator transition.