[9a-P02-1~24] 6.3 Oxide electronics

[9a-P02-15] Electronic structure and carrier density of new oxide semiconductor Sc-doped TiO₂ thin film

〇Reina Fujita¹, Tomohiro Yabuki¹, Rinna Kunishi¹, Daisuke Shiga², Hiroshi Kumigashira², Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

Keywords:

Sc-doped TiO2 thin film,p-type oxide semiconductor,carrier density

Ti_0.99Sc_0.01O_2-δ (Rutile, Anatase) thin films were prepared on Al₂O₃ substrates by RF magnetron sputtering. Both Rutile and Anatase films were deposited at 300 ℃. The crystal structure, electronic structure, temperature dependence of electrical conductivity and oxygen partial pressure dependence, and Hall effect were measured. The slope of the oxygen partial pressure dependence of electrical conductivity was negative for Rutile and positive for Anatase in the low oxygen partial pressure region. The Hall coefficient was negative for Rutile and positive for Anatase. From these results, it can be inferred that the carriers are electrons in Rutile and holes in Anatase.