Presentation Information
[9a-P07-7]Characteristics comparison of preferentially-oriented nitrogen-vacancy centers generated on {111} facets inverted pyramid holes in (001) diamond substrate
〇(M2)Koki Imuta1,2,4, Yohei Oikawa1,2, Rui Suzuki1,2, Kan Hayashi3, Norio Tokuda3, Hideyuki Watanabe4, Junko Ishi-Hayase1,2 (1.Keio Univ., 2.Keio CSRN, 3.NanoMaRi, Kanazawa Univ., 4.AIST)
Keywords:
NV center,CVD growth,preferentially oriented
Nitrogen-vacancy (NV) centers in diamond can be used as high-sensitivity magnetic field sensors under ambient pressure at room temperature. We successfully fabricated NV samples with a high orientation and selectable orientation direction by performing nitrogen-doped CVD growth on (001) diamond substrates that feature inverted pyramid hole structures with {111} facets formed by Ni anisotropic etching. In this study, multiple processing methods were implemented to reduce the effects of crystal defect layers on the substrates, aiming to improve the properties of the NV centers.