Presentation Information
[9p-N201-10]Domain Structure Characterization of High-Quality BiFe0.9Co0.1O3 Nanodot by HSQ Mask
〇(M2)Hajime Nakayama1, Kota Yoshikawa1, Koomok Lee1, Kuniyuki Kakushima2, Takuya Hoshii2, Satoru Kaneko3, Manabu Yasui3, Masahito Kurouchi3, Hajime Hojo4, Kei Shigematsu1,3, Masaki Azuma1,3 (1.IIR, Science Tokyo, 2.School of Eng., Science Tokyo, 3.KISTEC, 4.Kyusyu Univ.)
Keywords:
Multiferroics,Microfabrication
Room-temperature-ferroelectric ferromagnetic Co-substituted BiFeO3 is a promising candidate for low consuming non-volatile memory devices. We fabricated BFCO nanodots using HSQ hole-array-mask fabricated by electron beam lithography. In this presentation, we will report on the ferroelectric and magnetic domain changes in BFCO nanodots via poling, which are characterized in detail by PFM and MFM. In addition, we will discuss the achievement of high-quality nanodots by improving the process.