[9p-N201-1~14] 6.1 Ferroelectric thin films

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N201-7] Memristive change in refractive index of (111)-oriented epitaxial Pb(Zr_0.65Ti_0.35)O₃ thin film by application of pulse voltage

〇(M1C)Natsuki Takahashi¹, Toshiya Murai², Rai Kou², Shinya Kondo¹, Tomoaki Yamada¹ (1.Nagoya Univ., 2.AIST)

Keywords:

ferroelectric,optical memristor,epitaxial thin film

In this study, we attempted to control the refractive index of Pb(Zr_0.65Ti_0.35)O₃ (PZT) thin film for the purpose of developing an optical memristor that enables nonvolatile information processing using optical signals. The refractive index was changed gradually by initialization with a large electric field and modulation with multiple small electric field applications, and the changes were read by an optical interferometer. The results revealed a memristive change in the refractive index, indicating that PZT thin film can be used as an optical memristor.