[9p-N202-1~17] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N202-5] Integration of InGaAs MSM Photodetector with Narrow Metal Electrode Gap onto Si Waveguide

〇Kentaro Komatsu¹, Tomohiro Akazawa¹, Stephane Monfray², Frederic Boeuf², Toprasertpong Kasidit¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo, 2.STMicroelectronics)

Keywords:

silicon photonics,photodetector

In this study, we integrated an InGaAs MSM photodetector with a narrow electrode gap of 300 nm onto Si waveguide. At an applied voltage of 1 V, we demonstrated high responsivity of 1.03 A/W and a 3 dB bandwidth of 21 GHz. Furthermore, a clear eye opening was observed at 25 Gbit/s, indicating the potential of the device as a high-speed and high-responsivity photodetector for Si photonics applications.