[9p-N205-1~8] 13.8 Optical properties and light-emitting devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-N205-8] Inprovement of luminescence properties ZnGa2O4:Cr3+ far-red emitting phosphors by doping with In and Si

〇Misuke Maruyama^1,2, Tomoki Abe^1,3, Takeru Sugimoto^1,3, Takemi Yamamoto^1,2, Takahiro Asino^1,2, Koutoku Ohmi^1,2 (1.Tottori Univ., 2.Densibutsuri Lab., 3.Hikarihandoutai Lab.)

Keywords:

ZnGa2O4:Cr3+,phosphor,thin film

We have previously doped ZnGa2O4:Cr3+ powder samples, which exhibit far-red emission around 700 nm, with In to improve their luminescence properties and investigated the optimal concentration. As a result, in the powder sample of ZnGa1.98-xInxO4:Cr3+0.02(x=0.08) sintered at 1350°C for 5 hours, mixing and crystal growth were confirmed, and the luminescence intensity increased by approximately 1.5 times. However, since conductivity was not observed in thin films, Si was newly doped to achieve conductivity and further improve luminescence properties. As a result, it was found that the luminescence properties were significantly improved by the co-addition of In and Si.