[9p-N206-1~15] 6.3 Oxide electronics

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-N206-12] Non-polar switching of carbon-doped zirconia (ZrO_x) thin films formed by mist CVD for CeRAM

〇Masamichi Azuma^1,2, Tsubasa Miyamoto¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)

Keywords:

CeRAM (Correlated electron Random Access Memory),carbon-doped,Ziruconia (ZrOx) thin films

Carbon doped some transition metal oxide thin films such as hafnium dioxide shows a non-polar metal-insulator switching phenomenon, which is thought to be due to the Mott transition, occurs when a voltage is applied. A strongly correlated electron random access memory (CeRAM) has been proposed as a resistive memory that utilizes this phenomenon. In this paper, we report the fabrication of carbon-doped zirconia (ZrOx) thin films by the mist CVD method, which allows film deposition under atmospheric pressure, and the confirmation of the non-polar metal-insulator switching phenomenon for the first time.