The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[9p-N206-1~15]6.3 Oxide electronics

Tue. Sep 9, 2025 1:30 PM - 5:45 PM JST
Tue. Sep 9, 2025 4:30 AM - 8:45 AM UTC
N206 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-1]Metal-insulator transition properties of Ti2O3 films grown on van der Waals material hexagonal boron nitride

〇(M1)Keitaro Kanno1, Takuto Soma1, Satoru Fukamachi2, Hiroki Ago2, Akira Ohtomo1, Kohei Yoshimatsu1 (1.Science Tokyo, 2.Kyushu Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N206-2]Observation of Metal-Insulator Transition for λ-phase Ti3O5 Films using Hard X-ray Photoemission Spectroscopy

〇Kouhei Yoshimatsu1, Akira Yasui2 (1.Inst. Sci. Tokyo, 2.JASRI)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-3]High-temperature characterization of Sc-doped amorphous GaOx memristors

〇Yuki Komizo1, ZHUO DIAO1, Tetsuya Tohei1, Akira Sakai1 (1.Osaka Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-4]Modeling and analysis of resistance switching dynamics in amorphous GaOx memristors based on semiconductor physics

〇(M2)Rion Ogura1, Diao Zhuo1, Tetsuya Tohei1, Akira Sakai1 (1.University of Osaka)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-5]Interface State Modulation by Annealing for Property Control of Pt/Nb:SrTiO3 Junctions

〇(M2)Taiga Seto1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of sci)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-6]Realisation of Field-Effect Transistor with a Freestanding SrTiO3 Channel

〇(M2)Kosuke Tanaka1,2, Hisashi Inoue2, Ai Kitoh2, Masafumi Tamura1, Isao H Inoue1,2 (1.Tokyo Univ. of Science, 2.AIST)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-7]Investigation of the Voltage Dependence of Depletion Capacitance in (La1-xSrx)VO3/p-Si Junction

〇Kaito Fujitani1, Koji Iwasaki1, Shuhei Hashimoto1, Ryosuke Takagi1, Yasushi Hotta1 (1.Univ. of Hyogo)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-8]Fabrication and Current–Voltage Characterization of (La1-xSrx)VO3/n-Si Junctions

〇(M1)Koji Iwasaki1, Ryosuke Takagi1, Shuhei Hashimoto1, Kaito Hujitani1, Yasushi Hotta1 (1.Hyogo Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-9]The study of VO2 phase diagram under the effective of hydrogen gas pressure

〇Satoshi Hamasuna1, Takeaki Yajima1 (1.Kyushu Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-N206-10]Crystalline phase control of mist-CVD-derived VO2 thin films by cooling rate

〇Daiki Takayama1, Hironori Fujisawa1, Seiji Nakashima1, Ai I. Osaka1 (1.Univ. of Hyogo)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[9p-N206-11]Current Oscillations using the Nonlinear Conducting Properties in Single-crystal VO2

〇Ryota Kadowaki1, Masato Imaizumi2, Akitoshi Nakano2, Ichiro Terasaki2, Yuto Nakamura1, Hideo Kishida1 (1.Dept. of Appl. Phys., Nagoya Univ., 2.Dept. of Phys., Nagoya. Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-N206-12]Non-polar switching of carbon-doped zirconia (ZrOx) thin films formed by mist CVD for CeRAM

〇Masamichi Azuma1,2, Tsubasa Miyamoto1, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-N206-13]Comparison of local resistance changes in nickel-oxide and gallium-tin-oxide thin films

〇(B)Shota Machi1, Sota Mikami1, Masamichi Azuma3, Hirofumi Yamada2, Mutsumi Kimura1, Hidenori Kawanishi1, Hiroyuki Nishinaka3, Yuji Miyado1 (1.Ryukoku Univ, 2.Ctr of Ryukoku Univ, 3.Grad. School of Sci. and Tech. Kyoto Inst. of Tech)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[9p-N206-14]Thermal Conductivity and Applicability for Thermal Switches of Single-crystalline NiO epitaxial films

〇Ahrong Jeong1, Daito Takeda2, Mitsuki Yoshimura3, Hiromichi Ohta1 (1.RIES-Hokkaido Univ., 2.School of Eng.-Hokkaido Univ., 3.IST-Hokkaido Univ.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[9p-N206-15]Sputtering growth of PdCoO2 thin films for advanced interconnects

〇Takayuki Harada1, Takuro Nagai1, Yasushi Masahiro2, Yasunori Kama2 (1.NIMS, 2.Tanaka Precious Metal Technologies)
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