[9p-N206-1~15] 6.3 Oxide electronics

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-3] High-temperature characterization of Sc-doped amorphous GaO_x memristors

〇Yuki Komizo¹, ZHUO DIAO¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka Univ.)

Keywords:

memristor,high-temperature operation,edge AI

In recent years, with the growing demand for edge AI, memristors, which combine memory and computing functions, have been attracting attention. Among these, a-GaOx memristors are considered promising due to their ease of multivalence and ability to operate at high temperatures. However, to realize practical applications in geothermal well exploration, nuclear power generation, and aerospace, operation at even higher temperatures will be required in the future. In this study, it was confirmed that doping with Sc, which has a larger bandgap, enables stable operation at 800 K, demonstrating its practicality.