[9p-N206-1~15] 6.3 Oxide electronics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-5] Interface State Modulation by Annealing for Property Control of Pt/Nb:SrTiO₃ Junctions

〇(M2)Taiga Seto¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of sci)

Keywords:

Resistive Random-Access Memory,Current relaxation phenomena,Interface state

In metal/Nb:STO junctions, current relaxation characteristics and memory performance are considered to depend on interface states. In this study, interface states were evaluated using conductance and ICTS methods on devices with various interface treatments to investigate the effect of oxygen vacancies. As a result, an increase in oxygen vacancies led to a higher density of interface states, enhancing both current relaxation and memory performance. In particular, the current relaxation was suggested to originate from electron capture and emission at the interface states.