[9p-N301-1~19] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[9p-N301-11] Evaluation of Defects in Highly Carbon-doped GaN Layers

〇(M2)Momoko Inayoshi¹, Anna Honda², Hirotaka Watanabe², Yoshio Honda², Takeshi Kato², Noriyuki Taoka¹, Wakana Takeuchi¹ (1.Aichi Inst. of Tech., 2.Nagoya Univ.)

Keywords:

GaN