Session Details
[9p-N301-1~19]15.4 III-V-group nitride crystals
Tue. Sep 9, 2025 1:30 PM - 7:00 PM JST
Tue. Sep 9, 2025 4:30 AM - 10:00 AM UTC
Tue. Sep 9, 2025 4:30 AM - 10:00 AM UTC
N301 (Lecture Hall North)
[9p-N301-1][Invited Talk] Nano-scale electric field and charge imaging using scanning transmission electron microscopy
〇Satoko Toyama1, Takehito Seki1, Naoya Shibata1,2 (1.Univ. of Tokyo, 2.JFCC)
[9p-N301-2]Tilt-scan DPC-STEM Analysis of Polarity-Inverted AlN Crystals
〇Shigetaka Tomiya1, Zentaro Akase1, Kazunori Iwamitsu1, Akira Yasuhara2, Tomohiro Tamano3, Ryota Akaike3, Hideo Miyake3 (1.NAIST, 2.JEOL, 3.Mie Univ.)
[9p-N301-3]High-Speed 3D Imaging of Threading Dislocations in GaN Using Stimulated Raman Scattering
〇Shun Takahashi1, Yusuke Wakamoto1, Kazuhiro Kuruma2, Takuya Maeda1, Yasuyuki Ozeki1,2 (1.UTokyo, 2.RCAST)
[9p-N301-4]Stress evaluation and strain component analysis of heterojunction semiconductors grown with different crystal system
〇Kanata Shibuta1, Shyun Koshiba1, Yasuhiro Tanaka1, Masaru Terabayashi1, Hidefumi Akiyama2 (1.Kagawa Univ., 2.Tokyo Univ.)
[9p-N301-5]Evaluation of dislocation structure in AlGaN grown on sputter-annealed AlN
〇Hiroki Yasunaga1,2, Ryota Akaike2,3, Kensei Oya3, Shinnosuke Mori3, Takao Nakamura2,3, Hideto Miyake2,3 (1.Mie Univ. ORIP, 2.Mie Univ. IC-SDF, 3.Mie Univ. Grad. Sch. of Eng.)
[9p-N301-6]X-ray absorption fine structure of praseodymium ions implanted in gallium nitride
〇Shinichiro Sato1, Eri Yokozuka1, Shiro Entani1, Naotsugu Nagasawa1, Hiroyuki Saitoh1, Takuya Tsuji2, Daiju Matsumura2, Shin Ito3, Manato Deki3, Yoshio Honda3, Hiroshi Amano3, Shugo Nitta4, Michal Bockowski5 (1.QST, 2.JAEA, 3.Nagoya Univ., 4.Mie Univ., 5.PAS)
[9p-N301-7]Analysis of three-state double LO phonon scattering mechanism in GaN-based THz-QCL
〇Koki Yabe1,2, Airu Takahashi1,2, Akira Kaneko1,2, Sachie Fujikawa2,1, Hiroyuki Yaguchi2, Shashank Mishra1, Hideki Hirayama1 (1.RIKEN, 2.Saitama Univ.)
[9p-N301-8]Characterization of in-gap states in n++and p++ layers of GaN tunnel junctions
〇Motoki Kondo1, Raiya Hirose1, Kazuki Osada1, Daichi Imai1, Tetsuya Takeuchi1, Takao Miyajima1 (1.Meijo Univ.)
[9p-N301-9]Development of time-resolved heat energy transport analysis method in GaN films using a pump-probe Raman scattering spectroscopy with sub-nanosecond pulse lasers
〇(D)Yusuke Ishii1, Thee Ei Khaing Shwe1, Masatomo Sumiya2, Motoaki Iwaya3, Daisuke Iida4, Kazuhiro Okawa4, Bei Ma1, Yoshihiro Ishitani1 (1.Chiba Univ., 2.NIMS, 3.Meijo Univ., 4.KAUST)
[9p-N301-10]Evaluation of Non-Radiative Recombination processes in GaN using Laser Heterodyne Photothermal Displacement Method
〇Yuta Hosokoshi1, Yoshio Honda2, Atsuhiko Fukuyama1 (1.Univ. of Miyazaki, 2.Univ. of Nagoya)
[9p-N301-11]Evaluation of Defects in Highly Carbon-doped GaN Layers
〇(M2)Momoko Inayoshi1, Anna Honda2, Hirotaka Watanabe2, Yoshio Honda2, Takeshi Kato2, Noriyuki Taoka1, Wakana Takeuchi1 (1.Aichi Inst. of Tech., 2.Nagoya Univ.)
[9p-N301-12]Optical characterization of GaN crystals grown by Quartz-free hydride vapor phase epitaxy
〇Yuki Monnai1, Fujikura Hajime2, Konno Taichiro2, Shota Kaneki2, Koshi Sano1, Shuhei Ichikawa1,3, Tabata Hiroshi1, Kazunobu Kojima1 (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Sumitomo Chemical Co. Ltd., 3.Research Center for UHVEM, The Univ. of Osaka)
[9p-N301-13]Luminescence study of electron-beam-irradiated GaN
〇Kohei Shima1, Masahiro Horita2,3, Jun Suda2,3, Shoji Ishibashi4, Akira Uedono5, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ., 2.Nagoya Univ., 3.IMaSS-Nagoya Univ., 4.CCS-Univ. of Tsukuba, 5.Univ. of Tsukuba)
[9p-N301-14]E || c cryogenic excitonic modal gain and propagation loss of hydride vapor-phase epitaxy grown AlN substrates studied by variable stripe length method
〇Takumi Ikeshima1, Ryota Ishii1, Mitsuru Funato1 (1.Kyoto Univ.)
[9p-N301-15]Analysis of temperature dependence of A1(LO) mode frequency of BGaN alloys by Raman scattering spectroscopy
〇Hiroya Urasawa1, Atsuhiro Hayashi2, Soutaro Takenaka2, Yusuke Ishii1, Bei Ma1, Takayuki Nakano2, Yoshihiro Ishitani1 (1.Chiba Univ., 2.Shizuoka Univ.)
[9p-N301-16]Band alignment at the interface between InGaN photoelectrode and NiO co-catalyst
〇Yudai Yamashita1, Kazuhide Kumakura1, Kazuyuki Hirama1, Yoshitaka Taniyasu1 (1.NTT BRL)
[9p-N301-17]Carrier diffusion processes in InGaN QWs measured by temperature-dependent
time-resolved photoluminescence measurements
〇Osuke Ito1, Kotaro Akiyama1, Yuta Sakurai1, Atsushi A. Yamaguchi1, Maiko Fukui2, Tatsushi Hamaguchi3,4 (1.Kanazawa Inst. of Tech., 2.ETH, 3.Kyushu Univ., 4.Mie Univ.)
[9p-N301-18]Principal Component Analysis of Cathodoluminescence Emission Spatial Structures in InGaN Quantum Well
〇(M2)Ryunosuke Fuku1, Zentaro Akase1, Kazunori Iwamitsu1, Shigetaka Tomiya1 (1.Nara Institute of Science and Technology)
[9p-N301-19]Bayesian Inference Analysis of Time-Resolved Photoluminescence Decay Behavior in an InGaN Quantum Well
〇Kazunori Iwamitsu1, Itsuki Shimbo2, Zentaro Akase1, Toshiya Yokogawa1, Atsushi Yamaguchi2, Shigetaka Tomiya1 (1.NAIST, 2.Kanazawa Inst. of Tech.)