[9p-N301-1~19] 15.4 III-V-group nitride crystals

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N301-17] Carrier diffusion processes in InGaN QWs measured by temperature-dependent
time-resolved photoluminescence measurements

〇Osuke Ito¹, Kotaro Akiyama¹, Yuta Sakurai¹, Atsushi A. Yamaguchi¹, Maiko Fukui², Tatsushi Hamaguchi^3,4 (1.Kanazawa Inst. of Tech., 2.ETH, 3.Kyushu Univ., 4.Mie Univ.)

Keywords:

InGaN quantum wells,time-resolved PL measurements,carrier diffusion