Presentation Information

6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[9p-N301-18]Principal Component Analysis of Cathodoluminescence Emission Spatial Structures in InGaN Quantum Well

〇(M2)Ryunosuke Fuku¹, Zentaro Akase¹, Kazunori Iwamitsu¹, Shigetaka Tomiya¹ (1.Nara Institute of Science and Technology)

Keywords:

Cathodoluminescene Spectral Imaging,Principal Component Analysis,Indium Gallium Nitride

InGaN can widely vary its emission wavelength by changing the indium composition ratio, making it suitable for applications in light-emitting devices such as micro-LED displays. However, the presence of slight fluctuations in the indium composition ratio and crystal defects can lead to reduced emission efficiency and degradation of device performance. In this study, cathodoluminescence spectral imaging (CL-SI) was performed on an InGaN triple quantum well, and the result was analyzed using principal component analysis (PCA) to visualize the variations of a spatial distribution. The detailed results obtained through this approach will be presented.

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