Presentation Information
[9p-N301-6]X-ray absorption fine structure of praseodymium ions implanted in gallium nitride
〇Shinichiro Sato1, Eri Yokozuka1, Shiro Entani1, Naotsugu Nagasawa1, Hiroyuki Saitoh1, Takuya Tsuji2, Daiju Matsumura2, Shin Ito3, Manato Deki3, Yoshio Honda3, Hiroshi Amano3, Shugo Nitta4, Michal Bockowski5 (1.QST, 2.JAEA, 3.Nagoya Univ., 4.Mie Univ., 5.PAS)
Keywords:
Rare earths,Ion implantation,XAFS
Isolated praseodymium (Pr) ions in gallium nitride (GaN) can be used as quantum sensors, which can sense the physical quantities such as temperature with nanoscale spatial resolution. Although ion implantation and post thermal annealing are used to fabricate Pr-doped GaN quantum sensors, the electronic state of the implanted Pr ions has not been clarified and the detailed understanding of the optical activation mechanism is still lacking. In this study, the electronic states and local atomic structures of Pr implanted in GaN are analyzed by X-ray absorption fine structure (XAFS) measurement on SPring-8 BL14B1. It is found that the charge state of the implanted Pr ions is +3 and the improved symmetry of the local structure around the implanted Pr ions due to post thermal annealing enhances the photon emission from the implanted Pr ions.