[9p-N301-1~19] 15.4 III-V-group nitride crystals

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-N301-7] Analysis of three-state double LO phonon scattering mechanism in GaN-based THz-QCL

〇Koki Yabe^1,2, Airu Takahashi^1,2, Akira Kaneko^1,2, Sachie Fujikawa^2,1, Hiroyuki Yaguchi², Shashank Mishra¹, Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Keywords:

quantum cascade laser,nitride semiconductor,Terahertz

Terahertz quantum cascade lasers (THz-QCLs) are attracting attention as promising THz light sources due to their compact size, high efficiency, high output power, narrow linewidth, and other advantages. In this work, we report a new structure operating around 5 THz that achieves more than twice the optical gain compared to conventional resonant tunneling injection-type four-state structures by utilizing vertical and diagonal LO phonon scattering.