Presentation Information
[9p-N302-3]Study on the Surface Wettability of Major SiC Crystal Polytypes
〇JungGon Kim1, Gyeong-jun Song1, Na-keoung Kim1, Chan-ho Park1, Dae-uk Kim1, Mi-seon Park1, Kwang-hee Jung1, Won-jae Lee1, Woo-Sik Yoo2 (1.Dong-Eui University, 2.WaferMasters, Inc.)
Keywords:
SiC,Wettability,Contact Angle
SiC is a unique semiconductor material has various polytypes and has two different polarities of Si-terminated Si-face and C-terminated C-face. The wettability of a SiC substrate mixed with 4H-SiC, 6H-SiC, and 15R-SiC was investigated by static contact angle measurement in our previous study. Recently, we prepared a thick free-standing 3C-SiC layer on the (111) plane of dummy Si substrate using by CVD method. The free-standing 3C-SiC substrate was obtained after etching treatment of Si wafers and post wafering processes included lapping and polishing. In this study, we would like to comprehensively review the wettability of principal polytype of SiC substrates such as 4H-, 6H-(hexagonal, a-phase), and 15R-SiC (Rhombohedral) by newly adding the contact angle measurement of 3C-SiC (cubic, b-phase) substrate.