The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[9p-N302-1~6]15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 9, 2025 1:30 PM - 3:00 PM JST
Tue. Sep 9, 2025 4:30 AM - 6:00 AM UTC
N302 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[9p-N302-1]Installation of a High-Throughput X-ray Topography System at SPring-8 BL16B2

〇Takayoshi Shimura1,4, Kajiwara Kentaro2, Takashi Kameshima2,4, Satoshi Yamaguchi3, Taito Osaka4, Makina Yabashi4 (1.Waseda Univ., 2.JASRI, 3.Toyota Central Labs., 4.RIKEN)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N302-2]Analysis of inclined structure of threading screw dislocation in 4H-SiC using deep X-ray topography

〇Kotaro Ishiji1, Akio Yoneyama1, Isaho Kamata2 (1.SAGA-LS, 2.CRIEPI)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[9p-N302-3]Study on the Surface Wettability of Major SiC Crystal Polytypes

〇JungGon Kim1, Gyeong-jun Song1, Na-keoung Kim1, Chan-ho Park1, Dae-uk Kim1, Mi-seon Park1, Kwang-hee Jung1, Won-jae Lee1, Woo-Sik Yoo2 (1.Dong-Eui University, 2.WaferMasters, Inc.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-N302-4]Quality of silicon substrate and point defects: Renaissance (14) Effect of internal thermal stress on point defects

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okusa1 (1.Osaka Metropolitan Univ. Radiation Research center)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-N302-5]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (27) VNs

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okusa1 (1.Osaka Metropolitan Univ. Radiation Research center)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[9p-N302-6]Measurement of carbon concentration in silicon crystal/ Renaissance
(31) Behavior of CiOi and CiCs by electron irradiation and photoluminescence

〇Naohisa Inoue1, Shuichi Okuda1, Shuichi Kawamata1 (1.Osaka Metropolitan Univ. Radiation Research center)
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