Presentation Information
[9p-N302-5]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (27) VNs
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okusa1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,nitrogen,infrared absorption
Pair of vacancy and light element substitutional has a long research history.
For nitrogen N, only substitutional Ns was known by EPR or IR and both signals disappeared, and other signals appeared by annealing at around 400 oC. Stable V-N configuration was theoretically predicted to be VNN and VVNN. We introduced V by electron irradiation. By irradiation, NN absorption decreased and absorption appeared at 728 and 778cm-1, assigned to be VNN. By post annealing at 400 oC, 689 cm-1 absorption appeared and assigned to be VVNN.
In 2016, thermal degradation of minority carrier lifetime was reported in solar grade FZ-Si, by annealing between 400 and 700 oC. The 689 cm-1 band was extraordinary wide. We separated 685 cm-1 absorption and assigned as VNs. In 2023, lifetime degradation of FZ-Si and stability of CZ-Si for power device was reported. In CZ-Si, we observed 551 and 552 cm-1 absorption shifted to 556 and 557 cm-1 by the annealing and assigned the former as Ni and the latter as NiOi.
For nitrogen N, only substitutional Ns was known by EPR or IR and both signals disappeared, and other signals appeared by annealing at around 400 oC. Stable V-N configuration was theoretically predicted to be VNN and VVNN. We introduced V by electron irradiation. By irradiation, NN absorption decreased and absorption appeared at 728 and 778cm-1, assigned to be VNN. By post annealing at 400 oC, 689 cm-1 absorption appeared and assigned to be VVNN.
In 2016, thermal degradation of minority carrier lifetime was reported in solar grade FZ-Si, by annealing between 400 and 700 oC. The 689 cm-1 band was extraordinary wide. We separated 685 cm-1 absorption and assigned as VNs. In 2023, lifetime degradation of FZ-Si and stability of CZ-Si for power device was reported. In CZ-Si, we observed 551 and 552 cm-1 absorption shifted to 556 and 557 cm-1 by the annealing and assigned the former as Ni and the latter as NiOi.