Presentation Information

[9p-N302-5]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (27) VNs

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okusa1 (1.Osaka Metropolitan Univ. Radiation Research center)

Keywords:

silicon crystal,nitrogen,infrared absorption

Pair of vacancy and light element substitutional has a long research history.
For nitrogen N, only substitutional Ns was known by EPR or IR and both signals disappeared, and other signals appeared by annealing at around 400 oC. Stable V-N configuration was theoretically predicted to be VNN and VVNN. We introduced V by electron irradiation. By irradiation, NN absorption decreased and absorption appeared at 728 and 778cm-1, assigned to be VNN. By post annealing at 400 oC, 689 cm-1 absorption appeared and assigned to be VVNN.
In 2016, thermal degradation of minority carrier lifetime was reported in solar grade FZ-Si, by annealing between 400 and 700 oC. The 689 cm-1 band was extraordinary wide. We separated 685 cm-1 absorption and assigned as VNs. In 2023, lifetime degradation of FZ-Si and stability of CZ-Si for power device was reported. In CZ-Si, we observed 551 and 552 cm-1 absorption shifted to 556 and 557 cm-1 by the annealing and assigned the former as Ni and the latter as NiOi.