[9p-N303-1~10] KS.1 Solid State Quantum Sensor Group

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-N303-7] Spin Characteristics of Silicon Vacancy in 4H-SiC under Microwave Waveguide

〇Shinichi Tamura¹, Kosuke Tahara¹, Haruko Toyama¹, Katsuhiro Kutsuki¹, Yuichi Yamazaki², Takeshi Ohshima^2,3 (1.Toyota Central R&D Labs., Inc., 2.QST, 3.Tohoku Univ.)

Keywords:

quantum sensor,silicon carbide

A quantum sensor was developed using silicon vacancies (V_Si) in 4H-SiC crystals, assuming a silicon carbide (SiC) device structure. A microwave waveguide with a metal thin-film pattern was created to enable targeted microwave irradiation of specific V_Si. Techniques such as ODMR, Rabi oscillation, and Spin Echo were used to evaluate spin characteristics, including spin-spin relaxation time (T₂). These results suggest potential future applications in predicting failures in SiC devices.