[9p-N303-1~10] KS.1 Solid State Quantum Sensor Group

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-N303-8] Photoelectrical spin detection of single silicon vacancy in 4H-SiC and determination of photocurrent generation path

〇Tetsuri Nishikawa¹, Naoya Morioka^1,2, Hiroshi Abe³, Koichi Murata⁴, Kazuki Okajima¹, Takeshi Ohshima^3,5, Hidekazu Tsuchida⁴, Norikazu Mizuochi^1,2,6 (1.ICR Kyoto Univ., 2.CSRN Kyoto Univ., 3.QST, 4.CRIEPI, 5.Tohoku Univ., 6.QUP KEK)

Keywords:

SiC,Single spin,PDMR

Electrically readable qubits in semiconductors are expected for integrated electronics-quantum device applications, and a silicon vacancy in 4H-SiC is a promising candidate. The electrical detection of silicon vacancies is realized by using the photocurrent-detected magnetic resonance (PDMR) technique. However, the electrical detection of single spins has not been demonstrated. Here, we demonstrate the electrical detection of a single silicon vacancy spin in SiC based on the PDMR method and reveal the detailed photocurrent generation dynamics of silicon vacancies. In this presentation, we will report and discuss the details.