[9p-N304-1~15] KS.2 Quantum Information Engineering Group

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N304-4] Voltage pulse-induced shift of the switching characteristics of a two-level fluctuator in a silicon quantum dot

〇(DC)Ryutaro Matsuoka¹, Raisei Mizokuchi¹, Jun Yoneda², Tetsuo Kodera¹ (1.Science Tokyo, 2.Dept. of Adv. Mat. Sci., UTokyo)

Keywords:

silicon quantum bit,charge noise