[9p-N321-1~17] 15.4 III-V-group nitride crystals

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-1] Thermal properties of OVPE-GaN with reduced oxygen concentration

〇Kosei Asao¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Mihoko Maruyama¹, Junichi Takino², Tomoaki Sumi², Yoshio Okayama², Masashi Yoshimura³, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori¹ (1.The Univ. of Osaka, 2.Panasonic Holdings Corp., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)

Keywords:

OVPE method,Gallium nitride,Thermal diffusivity

In this study, we fabricated freestanding GaN substrates with lower oxygen concentrations than conventional substrates by the OVPE method, and evaluated their thermal and electrical properties in detail. The obtained crystals showed "mixed growth" in which the c-plane, which has a low oxygen concentration, and the semipolar plane, which has a high oxygen concentration, coexisted, and showed anisotropy in thermal diffusivity in the directions perpendicular to and parallel to the c-plane. In addition, while the thermal diffusivity of the mixed-growth OVPE-GaN in the direction perpendicular to the plane was comparable to that of HVPE-GaN, the electrical resistivity was reduced to 1.8×10^(-3) Ωcm, approximately one-third that of HVPE-GaN.