[9p-N321-1~17] 15.4 III-V-group nitride crystals | The 86th JSAP Autumn Meeting 2025

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[9p-N321-1~17]15.4 III-V-group nitride crystals

Tue. Sep 9, 2025 1:30 PM - 6:15 PM JST
Tue. Sep 9, 2025 4:30 AM - 9:15 AM UTC

N321 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-1]Thermal properties of OVPE-GaN with reduced oxygen concentration

〇Kosei Asao¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Mihoko Maruyama¹, Junichi Takino², Tomoaki Sumi², Yoshio Okayama², Masashi Yoshimura³, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori¹ (1.The Univ. of Osaka, 2.Panasonic Holdings Corp., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc., 5.Sosho-Ohshin Inc.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N321-2]Reduction of the Threading Dislocation Density in GaN Crystals During Facet Growth Induced by Adding Gallium Oxide in the Na Flux Method

〇Masayuki Imanishi¹, Kanako Okumura¹, Keisuke Kakinouchi¹, Mitsutoshi Ueda¹, Kenichi Kawabata¹, Kosuke Murakami¹, Shigeyoshi Usami¹, Yusuke Mori¹ (1.Grad. Sch. of Eng., The Univ. of Osaka)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-3]Planarization and reduction of dislocation density of GaN crystals after facet growth in the Na-flux method

〇Shogo Washida¹, Masayuki Imanishi¹, Ryoutaro Sasaki¹, Kosuke Murakami¹, Shigeyoshi Usami¹, Mihoko Maruyama¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.The Univ. of Osaka, 2.ILE, the Univ. of Osaka)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-N321-4]Growth of nitride nanocolumns with sub-200 nm pitch on Si(111) substrates via nanotemplate selective-area growth

〇Yugo Orima¹, Kota Hoshino¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-5]Growth of Si-doped GaN thin films by sputtering method

〇(M2)Akinori Saito¹, Riki Kanetake¹, Taiki Kobayashi¹, Naoomi Yamada¹ (1.Chubu Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-6]Improvement of mosaic spread of sputtered GaN thin film

〇(M1)Riki Kanetake¹, Akinori Saito¹, Naoomi Yamada¹ (1.Chubu Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-N321-7]Fabrication and evaluation of low-resistance n-type GaN thin film with Si-GaN target

〇Mirei Tokiwa¹, Koo Bando¹, Hidehiko Misaki¹, Yoshihiro Ueoka¹, Masami Mesuda¹ (1.Tosoh Corp.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-N321-8]Investigation of non-alloyed ohmic contacts to heavily donor-doped degenerate GaN

〇Kohei Okabe¹, Aiko Naito¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-N321-9]Effect of Growth Temperature of ScAlN on Electrical Properties of ScAlN/AlGaN/AlN/GaN Heterostructures

〇Tomoya Okuda¹, Takuya Maeda², Takahiko Kawahara³, Kozo Makiyama³, Ken Nakata³, Kazuhisa Ikeda¹, Atsushi Kobayashi¹ (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Sumitomo Electric Industries)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-10]Ferroelectric properties of ScAlN films epitaxially grown on GaN by sputtering

〇Sawaki Sato¹, Yusuke Wakamoto², Takuya Maeda², Hiroshi Funakubo³, Kohei Ueno⁴, Hiroshi Fujioka⁴, Kazuhisa Ikeda¹, Atsushi Kobayashi¹ (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Institute of Science Tokyo, 4.IIS, The Univ. of Tokyo)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-11]Growth of high-quality lattice-matched AlBN ferroelectric films on SiC substrate by RF reactive sputtering

〇Ken Shiraishi¹, Kyota Mikami¹, Tsunenobu Kimoto¹, Mitsuaki Kaneko¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[9p-N321-12]Evaluation of strain for BGaN growth on AlGaN/QST template

〇Atsuhiro Hayashi¹, Shun Nishikawa¹, Eito Kokubo², Genichiro Wakabayashi³, Yoshio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki⁵, Takayuki Nakano^1,5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-N321-13]Fabrication and characterization of BGaN diodes under low Ⅴ/Ⅲ ratio conditions

〇ryohei kudou¹, Eito Kokubo², Katsuyuki Takagi³, Genichiro Wakabayashi⁴, Yoshio Honda⁵, Hiroshi Amano⁵, Yoku Inoue^1,6, Toru Aoki^1,3, Takayuki Nakano^1,3,6 (1.Shizuoka Univ., 2.Nagoya Univ., 3.R.I.E., 4.Kindai Univ., 5.IMaSS Nagoya Univ., 6.Shizuoka Univ. Eng.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N321-14]Mechanisims of epitaxially grown c-BScN layers prepared by magnetron sputtering

〇Ryota Maeda¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹, Kakeru Ninomiya², Maiko Nishibori², Kazuyuki Hirama¹ (1.NTT BRL, 2.Tohoku University)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[9p-N321-15]Band Alignment Evaluation in Sc_xB_1-xN Alloys

〇Ryu Kawashima¹, Hitoshi Mizuno¹, Kimihisa Matsumoto¹, Yuichi Ota¹ (1.Toyama Pref. Univ.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[9p-N321-16]Fabrication and characterization of superconducting NbN_x films on AlN prepared by high-temperature annealing

〇Yuki Kato¹, Takayuki Harada², Hideto Miyake³, Kazuhisa Ikeda¹, Atsushi Kobayashi¹ (1.Tokyo Univ. of Science, 2.NIMS, 3.Mie Univ.)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[9p-N321-17]Epitaxial Growth of NbAlN films by Sputtering

〇Riku Kikuchi¹, Souta Kurogi², Takahiro Kawamura³, Kazuhisa Ikeda^1,2, Atsushi Kobayashi^1,2 (1.Grad.school of Tokyo Univ. of Science, 2.Tokyo Univ. of Science, 3.Mie Univ.)

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