[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-16] Understanding the origin of color centers at SiO₂/SiC interfaces through energy level investigation

〇Kentaro Onishi¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota CRDL)

Keywords:

SiO2/SiC interface,single-photon emitters,quantum defects