[9p-N322-1~20] 13.7 Compound and power devices, process technology and characterization | The 86th JSAP Autumn Meeting 2025

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[9p-N322-1~20]13.7 Compound and power devices, process technology and characterization

Tue. Sep 9, 2025 1:30 PM - 7:00 PM JST
Tue. Sep 9, 2025 4:30 AM - 10:00 AM UTC

N322 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-1]Systematic characterization of nitrogen-plasma treated SiC surface

〇Daiki Miura¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-2]Analyses of the current–voltage characteristics in thermal oxide/SiC structures – Discrepancy from Fowler-Nordheim tunneling current

〇Tatsuki Yoshida¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-3]Origin of mobility enhancement in SiC FinFETs through theoretical analysis of scattering mechanism

〇Shion Toshimitsu¹, Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-4]Performance improvements of SiC MOSFETs by 2-step hydrogen annealing without nitridation

〇Hiroki Fujimoto¹, Takuma Kobayashi¹, Shinji Kamihata¹, Keiji Hachiken¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-5]Improvement of SiC MOS structures by 2-step hydrogen annealing: Impact of hydrogen treatment on SiC surface

〇Satoshi Iga¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-6]Improvement of SiC MOS structures by 2-step hydrogen annealing: Impact of post-deposition annealing

〇Keiji Hachiken¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-7]Thermal stability of SiC MOS structures formed by 2-step hydrogen annealing

〇Ryuto Kakoi¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1.UOsaka)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-N322-8]Characterization of Ultrathin SiO₂/SiC Interfaces Fabricated by Low-temperature NO Oxynitridation

〇(M1)Takuma Katori^1,2, Takuji Hosoi^1,2 (1.Kwansei Gakuin Univ., 2.NIMS.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-N322-9]Impact of 4H-SiC surface etching after thermal oxidation on the formation of carbon-related defects at high temperature

〇(D)Chuyang Lyu¹, Takashi Onaya¹, Koji Kita¹ (1.Dept. of Advanced Materials Science, The Univ. of Tokyo)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-10]P_bC type-2 center (carbon dangling-bond center) at 4H-SiC(0001)/SiO₂ interface

〇(M2)Bunta Shimabukuro¹, Yusuke Nishiya², Sosuke Horiuchi¹, Mitsuru Sometani³, Hirohisa Hirai³, Heiji Watanabe⁴, Yu-ichiro Matsushita², Takahide Umeda¹ (1.Tsukuba Univ., 2.Quemix Inc., 3.AIST, 4.Osaka Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-11]Shifts and Recovery of Device Characteristics in SiC-MOSFETs after Repetitive Turn-Off Switching-Induced Overvoltage Stress

〇(M2)Takumu Nakatani¹, M.S. Hassan², Shin-ichi Nishizawa², Wataru Saito² (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-12]Luminescence-Induced Threshold Voltage Drift in SiC MOSFETs under Gate AC Stress

〇(M2)Ryosuke Shingo¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-13]Investigation of Forward Surge Current Capability for SiC MOSFETs

〇Kazuhiro Suzuki¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.Univ. of Tsukuba)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-N322-14]Evaluation of Auger recombination coefficient in highly N-doped 4H-SiC under high-level injection conditions

〇(P)Endong Zhang¹, Hiroko Matsuyam¹, Masashi Kato¹ (1.NITech)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-15]Study on the Performance Improvement of Optical-Interference Contactless Thermometry Based on Machine Learning

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-16]Understanding the origin of color centers at SiO₂/SiC interfaces through energy level investigation

〇Kentaro Onishi¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota CRDL)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-17]Effect of conductivity type of SiC substrate on the formation process of color centers at SiO₂/SiC interfaces

〇Yu Kaneko¹, Takato Nakanuma¹, Haruko Toyama², Kosuke Tahara², Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota Central R&D Labs., Inc.)

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N322-18]Optical properties of impurity-vacancy pairs in 4H-SiC from ab initio calculations

〇(D)Sosuke Iwamoto¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka)

6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[9p-N322-19]Influence of the factor added by Firsov on the energy loss of ions associated with electronic excitation

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹, Fumimasa Horikiri¹ (1.Hosei Univ.)

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[9p-N322-20]Model for Z₁-dependent electronic stopping cross sections and its application to Si, C, 4H-SiC, Al, Ni, and Ag