Presentation Information
[9p-N401-6]Epitaxial growth of Ca(Ge1-xSnx)2 including IV-group two-dimensional atomic layer on Si substrate
〇Tsukasa Terada1, Takashi Yoshizaki1, Takafumi Ishibe1,2, Yoshiaki Nakamura1,2 (1.Eng. Sci. Univ. Osaka, 2.OTRI)
Keywords:
thin film,germanene,layered material
CaGe2, which has a crystal structure composed of Ca layers and germanene, is attracting attention in various fields. Although the electronic properties can be controlled by modulating the buckling structure of germanene, methods for buckling modulation have not yet been established. In this study, we focus on modulating buckling by substituting Ge with Sn in CaGe2. We fabricate Ca(Ge1-xSnx)2 crystals on Si substrates and control their buckling structure.