[9p-N401-1~15] CS.9 Code-sharing session of 6.5&7.5

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-N401-8] [Invited Talk] Consideration of the Determining Factors of Surface N Density Saturation during N-Radical Nitridation of 4H-SiC surfaces

〇Haruki Yoshida¹, Takashi Onaya¹, Atsushi Tamura¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:

SiC,radical,nitridation

Improving the performance of SiC MOSFETs requires suppression of interface defects, and a kinetic understanding of nitridation using nitrogen radicals is essential. In this study, we analyzed the saturation behavior of nitrogen density and considered that the factors are nitrogen desorption reactions and the finite number of reactive sites on the surface.