Presentation Information
[9p-P05-1]Impact of Voids on Threshold Current Density in Lasers Grown on InP/Si Substrates
〇(M1)Mizuki Holt1, Mizuki Kuroi1, Liang Zhao1, Kazuhiko Shimomura1 (1.Sophia Univ.)
Keywords:
semiconductor,laser,Silicon
In this study, we investigated the impact of voids formed during the direct bonding of InP thin films onto Si substrates on the optical properties of strained quantum well lasers. Void density and coverage were evaluated using a Nomarski microscope and compared with threshold current density measurements. The results showed that lower void parameters tended to correspond to lower threshold current densities, indicating that high-quality bonding is crucial for improving device performance.