Presentation Information

[9p-P07-7]Formation of p-type SiGe/Ge(111) by patterning method and its Electrical Properties

〇Shugo Ishibashi1, Takei Souichirou1, Aikawa Mayu1, Mizoguchi Ryota1, Sawano Kentarou1 (1.Tokyo city univ.)

Keywords:

SiGe,hall measurement,mobility