Session Details
[9p-P07-1~8]15.5 Group IV crystals and alloys
Tue. Sep 9, 2025 1:30 PM - 3:30 PM JST
Tue. Sep 9, 2025 4:30 AM - 6:30 AM UTC
Tue. Sep 9, 2025 4:30 AM - 6:30 AM UTC
P07 (Gymnasium)
[9p-P07-1]Examination of transfer process of Ge layers on Si(001) onto c-Al2O3 substrates
〇Mahiro Tanaka1, Yuji Yamamoto2, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,3, Wei-Chen Wen2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IHP-Leibniz Institute for High Performance Microelectronics, 3.IMaSS, Nagoya Univ.)
[9p-P07-2]Effect of stress on thermal equilibrium concentration of Sn and vacancy in Ge and Si crystals
〇Koji Ozawa1, Iori Takeda1, Hibiki Bekku1, Yuji Hamamoto2, Koji Sueoka2 (1.Grad. Okayama Pref. Univ., 2.Okayama Pref. Univ.)
[9p-P07-3]Evaluation of crystal defects in SiGe thin films formed via annealing of Al–Ge/Si structures by polarized infrared transmission microscopy
〇(M1)Manami Iwata1, Ryoji Katsube1, Yuki Imai1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Noritaka Usami1,4,5 (1.Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ, 4.InFuS, 5.IMaSS Nagoya Univ)
[9p-P07-4]Hydrogen Gas Sensing with Nickel-silicide Nanosheet Formed on SiO2
〇Ryota Watanabe1, Naoki Hattori1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, Noriyuki Taoka1 (1.Aichi Inst. Tech, 2.Nagoya univ.)
[9p-P07-5]<!--StartFragment-->Enhanced light emission from SiGe/Ge multi quantum wells with increased periodicity<!--EndFragment-->
〇Tomohiro Hagiwara1, Mayu Aikawa1, Syuya Kikuoka1, Michihiro Yamada1, Kouhei Hamaya2,3,4, Kentarou Sawano1 (1.Tokyo Citu Univ, 2.GSES, The Univ. of Osaka, 3.GSRN, The Univ. of Osaka, 4.OTRI, The Univ. of Osaka)
[9p-P07-6]Application of Self-limiting Thermal Oxidation on Crystallization of Submicron Wire Structure of Si Film by Sputtering Deposition on SiO2
〇(M2)Kazuhito Uchida1, Jose A. Piedra-Lorenzana1, Daisuke Akai1, Takeshi Hizawa1, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech.)
[9p-P07-7]Formation of p-type SiGe/Ge(111) by patterning method and its Electrical Properties
〇Shugo Ishibashi1, Takei Souichirou1, Aikawa Mayu1, Mizoguchi Ryota1, Sawano Kentarou1 (1.Tokyo city univ.)
[9p-P07-8]HAXPES evaluation of the effect of uniaxial and biaxial strains introduced by bridge structures on the binding energies of the valence band and inner shell levels of Ge
〇Hiroshi Nohira1, Riku Ishikawa1, Yoshiharu Kirihara1, Ryoichi Kawai1, Kazuki Goshima1, Ryosuke Usui1, Takahiro Inoue1, Tappei Nishihara Tappei Nishihara2, Kentarou Sawano1 (1.Tokyo City Univ., 2.JASRI)