Presentation Information
[9p-P07-8]HAXPES evaluation of the effect of uniaxial and biaxial strains introduced by bridge structures on the binding energies of the valence band and inner shell levels of Ge
〇Hiroshi Nohira1, Riku Ishikawa1, Yoshiharu Kirihara1, Ryoichi Kawai1, Kazuki Goshima1, Ryosuke Usui1, Takahiro Inoue1, Tappei Nishihara Tappei Nishihara2, Kentarou Sawano1 (1.Tokyo City Univ., 2.JASRI)
Keywords:
Hard X-ray photoelectron spectroscopy,Ge Bridge structure,Tensile strain
Ge layers were grown on Si(100) or Si(110) substrates using a two-step growth method. Various bridge structures were then fabricated by photolithography and etching. Using these bridge structures, the effects of different directions of tensile strain and uniaxial or diaxial tensile strain on the valence band and core level were evaluated using hard X-ray photoelectron spectroscopy (HAXPES (BL09XU@SPring-8) to clarify the effects of strain on the binding energy.